2025-04-10 ジョージア工科大学
<関連情報>
- https://research.gatech.edu/feature/tbi
- https://advanced.onlinelibrary.wiley.com/doi/10.1002/adhm.202404680
長期頭蓋内圧モニタリングのための非外科的ステント内膜バイオエレクトロニクス Non-Surgical, In-Stent Membrane Bioelectronics for Long-Term Intracranial Pressure Monitoring
Jimin Lee, Allison Bateman, Mi Hyeon Kim, Bruno Rigo, Hodam Kim, Jaeho Lee, Yun Hyeok Choi, Robert Herbert, Deok Hee Lee, Woon-Hong Yeo
Advanced Healthcare Materials Published: 16 February 2025
DOI:https://doi.org/10.1002/adhm.202404680
Abstract
Traditional intracranial pressure (ICP) monitoring methods, using intraventricular catheters, face significant limitations, including high invasiveness, discrete data, calibration complexities, and drift issues, which hinder long-term and stable monitoring. Here, a non-surgical, in-stent membrane bioelectronic system is presented for continuous and reliable ICP monitoring. This platform integrates a capacitive thin-film sensor with a stent, enabling precise real-time detection of pressure fluctuations directly within the dural venous sinus without requiring skull penetration or frequent recalibration. The sensor demonstrates a high sensitivity of 0.052%/mmHg and a broad, readable pressure range of 3–30 mmHg while maintaining calibration-free and drift-free performance. A series of in vivo studies highlight the system’s superior sensitivity, rapid sampling rate, and long-term stability compared to conventional microcatheters. Statistical analyses reveal a strong agreement between the device and clinical reference, underscoring its potential to revolutionize ICP monitoring. These advancements pave the way for broader clinical applications, minimizing complications and improving patient outcomes in neurocritical care.
